On the anomalous peak in the forward bias capacitance and conduction mechanism in the Au/n-4H SiC (MS) Schottky diodes (SDs) in the temperature range of 140-400 K

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dc.contributor.authorKaya, Ahmet
dc.date.accessioned2025-10-24T18:09:24Z
dc.date.available2025-10-24T18:09:24Z
dc.date.issued2015
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractThe temperature and voltage dependence profile of the surface states (N-ss), series resistance (R-s) and electrical conductivity (sigma(ac)) have been investigated in temperature and voltage ranges of 140-400 K and (-5 V)-(6 V), respectively, The value of barrier height (BIT) decreases with increasing temperature as Phi(B)(T) = (1.02- 4 x 10(-4)center dot T) eV. These values of negative temperature coefficient (-4 x 10(-4) eV center dot K-1) is in good agreement with the a of band gap of SiC (-3.1 x 10(-4) eV K-1). Capacitance-voltage (C-17) plots for all temperatures show an anomalous peak in the accumulation region because of the effect of series resistance (R-s) and N-ss. The effect of R-s and N-ss on the C and conductance (G) are found noticeable high especially at low temperatures. The decrease in C values also corresponds to an increase in G/w values in the accumulation region. In addition, Ln(sigma(ac)) versus q/kT plots have two straight lines with different slopes which are corresponding to below and above room temperatures for various forward biases which are an evident two valid possible conduction mechanisms. The values of activation (E-alpha) were obtained from the slope of these plots and they changed from 6.3 rneV to 4.7 meV below room temperatures and 42.5 rneV to 34.4 meV for above room temperatures, respectively.
dc.identifier.doi10.1142/S0217979215500101
dc.identifier.issn0217-9792
dc.identifier.issn1793-6578
dc.identifier.issue4
dc.identifier.scopus2-s2.0-84928384258
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1142/S0217979215500101
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3633
dc.identifier.volume29
dc.identifier.wosWOS:000349631100002
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherWorld Scientific Publ Co Pte Ltd
dc.relation.ispartofInternational Journal Of Modern Physics B
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20251023
dc.subjectAu/n-4H SiC SDs; electrical characteristics; temperature and voltage dependence; AC electrical conductivity and activation energy
dc.titleOn the anomalous peak in the forward bias capacitance and conduction mechanism in the Au/n-4H SiC (MS) Schottky diodes (SDs) in the temperature range of 140-400 K
dc.typeArticle

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