Production and Characterization of AlNiOZnOp-SiAl Composite Photodiodes for Solar Energy Tracking Systems

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dc.contributor.authorGurgenc, Ezgi
dc.contributor.authorDikici, Aydın
dc.contributor.authorASLAN, Fehmi
dc.date.accessioned2025-10-24T18:04:17Z
dc.date.available2025-10-24T18:04:17Z
dc.date.issued2022
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractIn present study, NiO:ZnO thin films in molar ratios of 1:0, 0:1, 3:1, 1:1 and 1:3 were formed on p-Si layers with aluminum (Al) bottom contact. Dynamic sol-gel spin coating method was used as coating method. Al top contacts were deposited on thin films and Al/NiO:ZnO/p-Si/Al photodiodes were fabricated. The structural and morphological properties of the photodiodes were determined by X-ray diffraction (XRD), emission scanning electron microscopy (FE-SEM), and energy dispersive X-ray spectroscopy (EDX). The photoresponse and electrical properties of the produced photodiodes were investigated by current–voltage (I–V) and capacitance-voltage (C-V) measurements. Al/NiO:ZnO/p-Si/Al photodiodes were successfully produced. It was determined that the thin films formed were composed of nanostructures. All photodiodes were found to be sensitive to light. It was seen that the photosensitivity of composite photodiodes was higher than the pure photodiodes and photosensitivity decreased as the ZnO ratio increased. It was determined that the most sensitive photodiode to light was the composite photodiode with a NiO:ZnO ratio of 3:1, and the highest photosensitivity was measured as 3.12 x 103 at 100 mW/cm2 light intensity in this photodiode. In all photodiodes, the capacitance values decreased as the frequency increased. The results show that by changing the NiO:ZnO ratio, the photoresponse and electrical parameters of the photodiodes can be controlled and the produced photodiodes can be used as a photosensor in solar tracking systems and optoelectronic applications.
dc.identifier.doi10.55525/tjst.1071332
dc.identifier.endpage119
dc.identifier.issn1308-9099
dc.identifier.issue1
dc.identifier.startpage109
dc.identifier.trdizinid509930
dc.identifier.urihttps://doi.org/10.55525/tjst.1071332
dc.identifier.urihttps://search.trdizin.gov.tr/tr/yayin/detay/509930
dc.identifier.urihttps://hdl.handle.net/20.500.12899/2771
dc.identifier.volume17
dc.indekslendigikaynakTR-Dizin
dc.language.isoen
dc.relation.ispartofTurkish Journal of Science & Technology
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzTR-Dizin_20251023
dc.subjectMühendislik
dc.subjectKimya
dc.subjectComposite photodiode
dc.subjectSol-gel
dc.subjectSolar irradiation.
dc.subjectSemiconductor metal oxide
dc.subjectNanomaterial
dc.titleProduction and Characterization of AlNiOZnOp-SiAl Composite Photodiodes for Solar Energy Tracking Systems
dc.typeArticle

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