Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

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dc.authoridSAN, SAIT EREN/0000-0001-5042-4555;
dc.contributor.authorKaya, Ahmet
dc.contributor.authorZeyrek, Sedat
dc.contributor.authorSan, Sait Eren
dc.contributor.authorAltindal, Smsettin
dc.date.accessioned2025-10-24T18:09:15Z
dc.date.available2025-10-24T18:09:15Z
dc.date.issued2014
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractThe perylene (C20H12) layer effect on the electrical and dielectric properties of Al/p-Si (MS) and Al/perylene/p-Si (MPS) diodes have been investigated and compared in the frequency range of 0.7 kHz-2 MHz. Experimental results show that C-V characteristics give an anomalous peak for two structures at low frequencies due to interface states (N-ss) and series resistance (R-s). The increases in C and G/omega at low frequencies confirm that the charges at interface can easily follow an ac signal and yield excess capacitance and conductance. The frequency-dependent dielectric constant (epsilon') and dielectric loss (epsilon '') are subtracted using C and G/omega data at 1.5 V. The epsilon' and epsilon '' values are found to be strongly dependent on frequency and voltage, and their large values at low frequencies can be attributed to the excess polarization coming from charges at traps. Plots of ln(sigma(ac))-ln(omega) for two structures have two linear regions, with slopes of 0.369 and 1.166 for MS, and of 0.077 and 1.061 for MPS, respectively. From the C-2-V characteristics, the doping acceptor atom concentration (N-A) and barrier height (Phi(B)) for Schottky barrier diodes (SBDs) of MS and MPS types are also obtained to be 1.484 X 10(15) and 1.303 x 10(15) cm(-3), and 1.10 and 1.13 eV, respectively.
dc.identifier.doi10.1088/1674-1056/23/1/018506
dc.identifier.issn1674-1056
dc.identifier.issn1741-4199
dc.identifier.issue1
dc.identifier.scopus2-s2.0-84893194684
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1088/1674-1056/23/1/018506
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3550
dc.identifier.volume23
dc.identifier.wosWOS:000331805400088
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofChinese Physics B
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20251023
dc.subjectorganic-inorganic based Schottky diodes; perylene (C20H12) interfacial layer; electrical and dielectric properties; frequency and voltage dependence
dc.titleElectrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range
dc.typeArticle

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