Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

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dc.contributor.authorYucedag, Ibrahim
dc.contributor.authorKaya, Ahmet
dc.contributor.authorAltindal, Semsettin
dc.contributor.authorUslu, Ibrahim
dc.date.accessioned2025-10-24T18:09:15Z
dc.date.available2025-10-24T18:09:15Z
dc.date.issued2014
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractIn order to investigate of cobalt-doped interfacial polyvinyl alcohol (PVA) layer and interface trap (D-it) effects, Al/pSi Schottky barrier diodes (SBDs) are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carried out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or epsilon '-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance (R-s), and interfacial layer. Both the real and imaginary parts of dielectric constant (epsilon ' and epsilon '') and electric modulus (M ' and M ''), loss tangent (tan delta), and AC electrical conductivity (sigma(ac)) are investigated, each as a function of frequency and applied bias voltage. Each of the M ' versus V and M '' versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance (C) and conductance (G/w) values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of Al/Co-doped PVA/p-Si (MPS) type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance (CLF-CHF) method.
dc.identifier.doi10.1088/1674-1056/23/4/047304
dc.identifier.issn1674-1056
dc.identifier.issn1741-4199
dc.identifier.issue4
dc.identifier.scopus2-s2.0-84899539102
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1088/1674-1056/23/4/047304
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3551
dc.identifier.volume23
dc.identifier.wosWOS:000335646200076
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofChinese Physics B
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20251023
dc.subjectAl/Co-PVA/p-Si (MPS); electrical and dielectric properties; AC electrical conductivity; frequency and voltage dependence
dc.titleFrequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature
dc.typeArticle

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