The light detection performance of Al/DPAVBi/n-Si heterojunction for wide-range spectrum

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dc.contributor.authorKocyigit, Adem
dc.contributor.authorHussaini, Ali Akbar
dc.contributor.authorYildiz, Dilber Esra
dc.contributor.authorGunduz, Bayram
dc.contributor.authorYildirim, Murat
dc.date.accessioned2026-06-19T06:39:44Z
dc.date.available2026-06-19T06:39:44Z
dc.date.issued2025
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractThe 4,4 '-Bis[4-(di-p-tolylamino)styryl]biphenyl (DPAVBi) is a sky-blue fluorescent emitter and widely used in organic light emitting diodes (OLED) for improving optoelectronic behaviors. In this study, we employed DPAVBi as interfacial layer between Si and Al metal by spin coating technique to investigate its detection performance under various light power densities and across a broad spectrum from ultra-violet (UV) to near infrared (NIR). The crystallinity and surface morphology of DPAVBi layer were characterized by x-ray diffractometer (XRD) and scanning electron microscope (SEM). UV-Vis spectrometer was utilized to determine absorption behavior and band gap of DPAVBi layer. The diode and photodetector characteristics of the Al/DPAVBi/n-Si heterojunction were obtained by current voltage (I-V) and current-transient (I-t) measurements. According to thermionic emission theory, the Al/DPAVBi/n-Si heterojunction exhibited an ideality factor (n) of 4.07 and a barrier height (& Fcy;(b)) of 0.65 eV. The diode parameters were also confirmed by Cheung and Norde methods. The responsivity, photosensitivity, and specific detectivity values were also determined depending on the illumination of light power density and in the case wavelength. The Al/DPAVBi/n-Si heterojunction exhibited 0.89 A/W responsivity under sunlight. The wavelength-dependent photodetector parameters revealed that the Al/DPAVBi/n-Si heterojunction is more sensitive to light illumination in the visible region at a wavelength of 600 nm. The obtained results highlight that Al/DPAVBi/n-Si heterojunction can be employed as promising potential for optoelectronic applications in the visible range.
dc.identifier.doi10.1016/j.sna.2025.116981
dc.identifier.issn0924-4247
dc.identifier.issn1873-3069
dc.identifier.orcid0000-0002-4541-3752
dc.identifier.orcid0000-0002-7128-9994
dc.identifier.orcid0000-0002-1447-7534
dc.identifier.scopus2-s2.0-105013648821
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.sna.2025.116981
dc.identifier.urihttps://hdl.handle.net/20.500.12899/5736
dc.identifier.volume394
dc.identifier.wosWOS:001564921600001
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofSensors and Actuators A-Physical
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20260612
dc.subjectDpavbi
dc.subjectSchottky Photodetector
dc.subjectResponsivity
dc.subjectExternal Quantum Efficiency
dc.titleThe light detection performance of Al/DPAVBi/n-Si heterojunction for wide-range spectrum
dc.typeArticle

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