Capacitance/Conductance-Voltage-Frequency Characteristics of Au/PVC+TCNQ/p-Si Structures in Wide Frequency Range

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dc.authoridTecimer, Huseyin/0000-0002-8211-8736|Tasdemir, Ibrahim Hudai/0000-0002-8914-374X
dc.contributor.authorKaya, Ahmet
dc.contributor.authorTecimer, Huseyin
dc.contributor.authorVural, Ozkan
dc.contributor.authorTasdemir, Ibrahim Hudai
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2025-10-24T18:09:22Z
dc.date.available2025-10-24T18:09:22Z
dc.date.issued2014
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractThe energy dependence of the interface states (N-ss) and relaxation time (tau) and capture cross section (sigma(p)) of N-ss in (Au/PVC+TCNQ/p-Si) heterojunction were investigated using high-low frequency capacitance (C-HF-C-LF) and conductance method, which contains many capacitance/conductance [C/(G/omega)-V] plots. The C value of the heterojunction increases with decreasing frequency as almost exponentially due to the existence of N-ss between metal and semiconductor. The N-ss and tau values have been obtained in the (0.053-E-v)-(0.785-E-v)-eV energy range by considering the voltage-dependent surface potential obtained from the lowest measurable frequency C-V curve at 1 kHz. The magnitude of N-ss ranges from 3.88x10(12) eV(-1)cm(-2) to 3.24 x 10(12) eV(-1)cm(-2). In the same energy range, the value of tau ranges from 5.73x10(-5) to 1.58x10(-4) s and shows almost an exponential increase with increasing bias from the top of the valance band edge toward the midgap of semiconductor. The obtained N-ss values from C-HF-C-LF and conductance methods are in good agreement with each other for the heterojunction. As a result, the mean value of N-ss was found on the order of 10(12) eV(-1)cm(-2) and this value is very suitable for an electronic device.
dc.description.sponsorshipGazi University Scientific Research Project; FEF-Research [FEF 05/2012-42, FEF 05/2012-46]; Amasya University Scientific Research Project [FMB-BAP-021]
dc.description.sponsorshipThis work was supported in part by Gazi University Scientific Research Project, in part by the FEF-Research under Project FEF 05/2012-42 and Project FEF 05/2012-46, and in part by the Amasya University Scientific Research Project under Grant FMB-BAP-021. The review of this paper was arranged by Editor A. C. Arias.
dc.identifier.doi10.1109/TED.2013.2296037
dc.identifier.endpage590
dc.identifier.issn0018-9383
dc.identifier.issn1557-9646
dc.identifier.issue2
dc.identifier.scopus2-s2.0-84893521997
dc.identifier.scopusqualityQ2
dc.identifier.startpage584
dc.identifier.urihttps://doi.org/10.1109/TED.2013.2296037
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3597
dc.identifier.volume61
dc.identifier.wosWOS:000330620600049
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIeee-Inst Electrical Electronics Engineers Inc
dc.relation.ispartofIeee Transactions On Electron Devices
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20251023
dc.subjectInorganic compounds; interface states; organic materials; semiconductor-metal interface
dc.titleCapacitance/Conductance-Voltage-Frequency Characteristics of Au/PVC+TCNQ/p-Si Structures in Wide Frequency Range
dc.typeArticle

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