Development of optoelectronic properties of a novel graphene oxide/ copper phthalocyanine composite: Production and photoelectric characteristics of diode
Küçük Resim Yok
Tarih
2025
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Novel copper (II) phthalocyanine bearing 3-chloro-4-fluorophenoxy (2) and its graphene oxide (GO)-based composites (2a-2f) were synthesized and characterized. The single crystal of the starting material compound (1) was analyzed for the first time using X-ray diffraction in this study. Phthalocyanine composites containing different percentages of graphene oxide by weight (wt.% GO) were prepared. SEM (scanning electron microscopy) results confirmed the interaction between GO and CuPc (2). In this study, the effects of concentration on the optoelectronic and conductivity properties of CuPc (2), as well as the influence of graphene oxide on the optoelectronic properties of CuPc (2) were extensively investigated. Additionally, the surface morphological properties of the phthalocyanine film were analyzed. Finally, an n-Si/CuPc (2)/Al diode was fabricated, and its photoelectric properties were investigated.
Açıklama
Anahtar Kelimeler
Phthalocyanine, Graphene Oxide, Optoelectronic Properties, Diode, Photoelectrical Characteristics
Kaynak
Optical Materials
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
159
