Electrical and dielectric properties and intersection behavior of G/?-V plots for Al/Co-PVA/p-Si (MPS) structures at temperatures below room temperature

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dc.contributor.authorYucedag, Ibrahim
dc.contributor.authorKaya, Ahmet
dc.contributor.authorAltindal, Semsettin
dc.contributor.authorUslu, Ibrahim
dc.date.accessioned2025-10-24T18:09:57Z
dc.date.available2025-10-24T18:09:57Z
dc.date.issued2014
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractBoth the electrical and the dielectric properties of the Al/Co-doped polyvinyl alcohol/p-Si metal-polymer-semiconductor (MPS) structure have been studied using temperature-dependent admittance-voltage (C/G-V) measurements at temperatures below room temperature at 300 kHz. The C-V plot indicates two peaks for each temperature corresponding to inversion and accumulation regions, respectively. The first peak was attributed to a particular distribution of interface traps (D (it) ), and the second was attributed to the series resistance (R (s) ) and interfacial polymer layer. G/omega-V plots show almost U-shape behavior for all temperatures and a crossing at almost 3 V. Such behavior of the G/omega-V plots may be attributed to the lack of free charge at low temperatures. After this intersection point, while the value of the capacitance (C) starts decreasing, the G/omega continues to increase. The temperature-dependent real and imaginary parts of the dielectric constant (epsilon', epsilon aEuro(3)) and of the electric modulus (M', MaEuro(3)), as well as the ac electrical conductivity (sigma (ac) ), of structure were obtained using C and G data before and after the intersection point (at 2 and 6 V), respectively. Experimental results show that the epsilon', epsilon aEuro(3), loss tangent (tan delta), sigma (ac) , M', and MaEuro(3) values were strong functions of the temperature and the applied bias voltage. In addition, G/omega-T and epsilon aEuro(3)-T plots show two different behaviors, one before and the other after the intersection point.
dc.description.sponsorshipDuzce University BAP research [2013.07.02.204]
dc.description.sponsorshipThis work is supported by Duzce University BAP research project number 2013.07.02.204.
dc.identifier.doi10.3938/jkps.65.2082
dc.identifier.endpage2089
dc.identifier.issn0374-4884
dc.identifier.issn1976-8524
dc.identifier.issue12
dc.identifier.scopus2-s2.0-84920456716
dc.identifier.scopusqualityQ3
dc.identifier.startpage2082
dc.identifier.urihttps://doi.org/10.3938/jkps.65.2082
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3885
dc.identifier.volume65
dc.identifier.wosWOS:000347455600015
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherKorean Physical Soc
dc.relation.ispartofJournal Of The Korean Physical Society
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_20251023
dc.subjectMetal-polymer-semiconductor (MPS) structures; Temperature dependence of electric and dielectric properties; Intersection behavior in G/omega-V-T plots
dc.titleElectrical and dielectric properties and intersection behavior of G/?-V plots for Al/Co-PVA/p-Si (MPS) structures at temperatures below room temperature
dc.typeArticle

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