The Effect of Align Parameter on Scattering Parameter for Pseudomorphic High Electron Mobility Transistor
Yükleniyor...
Dosyalar
Tarih
2020
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Malatya Turgut Özal Üniversitesi
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
In this paper, various physical device simulation of pseudomorphic High Electron Mobility Transistors are realized to show the effect of aligning parameter on scattering parameters. S parameters are complex numbers, so both real and imaginer part of scattering parameters are plotted concerning frequency at different align parameters. In all figures, a brief explanation about the change of the S parameter for frequency and align parameter is provided. The effect of the align parameter, which has a value of 0.4 differs from other align parameter values such as 0.45, 0.5, 0.55 and 0.6 on scattering parameters of the transistor structure.
Açıklama
Anahtar Kelimeler
PHMET, Scattering parameters, Align Parameter, Device Simulation
Kaynak
NATURENGS
WoS Q Değeri
Scopus Q Değeri
Cilt
1
Sayı
2
Künye
Satılmış, G. (2020). The Effect of Align Parameter on Scattering Parameter for Pseudomorphic High Electron Mobility Transistor . NATURENGS , 1 (2) , 89-96 .
