Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range

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dc.contributor.authorAlialy, Sahar
dc.contributor.authorKaya, Ahmet
dc.contributor.authorMarıl, Elif
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorUslu, Ibrahim
dc.date.accessioned2025-10-24T18:06:41Z
dc.date.available2025-10-24T18:06:41Z
dc.date.issued2015
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractThe barrier height (BH) of the Au/(Ca<inf>1.9</inf>Pr<inf>0.1</inf>Co<inf>4</inf>O<inf>x</inf>)/n-Si structure was evaluated in the temperature range of 120-360 K using current-voltage (I-V) measurements. The zero-bias BH (?Bo) and ideality factor (n) values deduced from standard thermionic emission theory were found to be 0.35 eV and 6.30 at 120 K and 0.83 eV and 5.1 at 360 K, respectively. Because such changes in ?Bo were not in agreement with the negative temperature coefficient (?) of the Si band gap, effects of tunnelling and BH inhomogeneity were added to the analysis of junction current. With this modification, the value of ?Bef. was found to decrease with temperature at a rate of -2.4 × 10-4 eVK-1 in approximate agreement with the known ? of the Si band gap. Attempts to model the inhomogeneous BH with a single Gaussian distribution were also successful, rendering a mean value of BH(?Bo) of 0.997 eV and a standard deviation (?o) of 0.12 eV. Similar conclusions were drawn from additional analyses, employing the modified Richardson plots. Our results suggest that the analysis of electronic transport at this and possibly other MIS junctions should include both the effect of tunnelling and that of BH inhomogeneity. © 2020 Elsevier B.V., All rights reserved.
dc.identifier.doi10.1080/14786435.2015.1033029
dc.identifier.endpage1461
dc.identifier.issn1478-6435
dc.identifier.issn1478-6443
dc.identifier.issue13
dc.identifier.scopus2-s2.0-84929280555
dc.identifier.scopusqualityQ3
dc.identifier.startpage1448
dc.identifier.urihttps://doi.rog/10.1080/14786435.2015.1033029
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3131
dc.identifier.volume95
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherTaylor and Francis Ltd. michael.wagreich@univie.ac.at
dc.relation.ispartofPhilosophical Magazine
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzScopus_20251023
dc.subject(Ca1.9Pr0.1Co4Ox) interfacial layer
dc.subjectcurrent-transport mechanisms
dc.subjectGaussian distribution (GD) of BHs
dc.subjecttemperature dependent
dc.titleElectronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range
dc.typeArticle

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