Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-Ca1.9Pr0.1Co4Ox/n-Si structures at forward biases using impedance spectroscopy analysis

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dc.contributor.authorÇetinkaya, Hayriye Gokcen
dc.contributor.authorAlialy, Sahar
dc.contributor.authorAltındal, Şemsettin
dc.contributor.authorKaya, Ahmet
dc.contributor.authorUslu, Ibrahim
dc.date.accessioned2025-10-24T18:06:40Z
dc.date.available2025-10-24T18:06:40Z
dc.date.issued2015
dc.departmentMalatya Turgut Özal Üniversitesi
dc.description.abstractThe dielectric properties of Au/(1 % graphene doped-Ca<inf>1.9</inf>Pr<inf>0.1</inf>Co<inf>4</inf>O<inf>x</inf>)/n-Si structures were investigated by the impedance spectroscopy method including capacitance–voltage (C–V) and conductance–voltage (G/?–V) measurements in the frequency range of 10–2 MHz at room temperature. The experimental results show that the real and imaginary parts of dielectric constant (??, ???) and electric modulus (M? and M??), and ac electrical conductivity (?<inf>ac</inf>) are a strong functions of frequency and voltage, both. Negative dielectric constant behavior was observed at sufficiently high forward bias voltages at low frequencies and it was attributed to the interfacial polarization, interface traps and series resistance. ?? decreases with increasing frequency at sufficiently high biases whereas ??? increases. Since interfacial polarization and interface states, both, can follow the ac external signal easily at low frequencies, there occurs a contribution to the measured capacitance and conductance. The negative values of ?? correspond to maximum value of ???. Such contrary behavior in the ?? and ??? appears as an abnormality when compared to the conventional behavior metal–semiconductor structures with and without interfacial layer. Experimental results confirmed that the dielectric properties of these structures are quite sensitive to the frequency and applied bias voltage, both, especially at low frequencies and high voltages because of density distribution of interface states and interfacial polarization. © 2016 Elsevier B.V., All rights reserved.
dc.identifier.doi10.1007/s10854-015-2816-7
dc.identifier.endpage3195
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue5
dc.identifier.scopus2-s2.0-84939988223
dc.identifier.scopusqualityQ2
dc.identifier.startpage3186
dc.identifier.urihttps://doi.rog/10.1007/s10854-015-2816-7
dc.identifier.urihttps://hdl.handle.net/20.500.12899/3123
dc.identifier.volume26
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer New York LLC barbara.b.bertram@gsk.com
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzScopus_20251023
dc.subjectCalcium
dc.subjectCapacitance
dc.subjectDielectric properties
dc.subjectElectric conductivity
dc.subjectElectric resistance
dc.subjectGraphene
dc.subjectInterface states
dc.subjectPolarization
dc.subjectSpectroscopic analysis
dc.subjectSpectroscopy
dc.subjectAC electrical conductivity
dc.subjectApplied bias voltage
dc.subjectDensity distributions
dc.subjectForward bias voltage
dc.subjectImpedance spectroscopy
dc.subjectInterfacial polarization
dc.subjectNegative dielectric
dc.subjectSemiconductor structure
dc.subjectBias voltage
dc.titleInvestigation of negative dielectric constant in Au/1 % graphene (GP) doped-Ca1.9Pr0.1Co4Ox/n-Si structures at forward biases using impedance spectroscopy analysis
dc.typeArticle

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